Product Details:
Useful Hot Zone Volume | 250mm L x 250mm W x 280mm H |
Shell Construction | Double Wall S. S Body |
Vaporization Cum Mixing Chamber | -Dia 125mm x 200mm Height Made of SS 316,Vacuum Sealing,Two Precursor Chambers: Liquid And Solid |
Shell Size | 300mm L x 300mm W x 400mm H |
Electrical Requirements | 230V-50HZ, 1 Phase |
Power | 3kW |
Country of Origin | Made in India |
The MOCVD system utilizes plasma assistance to achieve high-precision deposition of metal oxide thin films. This ensures uniform coatings with exceptional quality, meeting the stringent requirements of modern technological applications.
Tailored for diverse applications, the system accommodates a wide range of metal-organic precursors, allowing researchers and manufacturers to synthesize complex metal oxide materials with varying compositions and properties.
Offering precise control over growth conditions, the MOCVD system enables researchers to manipulate parameters such as temperature, pressure, and gas flow rates. This level of control is crucial for tailoring material characteristics and performance.
In semiconductor manufacturing, the MOCVD system facilitates the deposition of critical metal oxide layers with exacting precision, contributing to the development of high-performance electronic and optoelectronic devices.
Equipped with a user-friendly interface, the system allows operators to program and monitor deposition processes easily. This intuitive control enhances efficiency in research and production environments.